2SA1585STPR
TRANS PNP 20V 2A SPTManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SA1585STPR is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component offers a collector-emitter breakdown voltage (Vce) of 20V and a continuous collector current (Ic) capability of 2A. With a DC current gain (hFE) of at least 180 at 100mA and 2V, and a transition frequency (fT) of 240MHz, it provides efficient signal amplification. The transistor exhibits a maximum power dissipation of 400mW and a Vce (sat) of 500mV at 100mA/2A, ensuring reliable operation within its specified limits. The 2SA1585STPR is supplied in an SPT package, suitable for automated assembly via tape and box (TB) packaging. This component finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 2V |
| Frequency - Transition | 240MHz |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 400 mW |
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