2SA1576AT106Q
TRANS PNP 50V 0.15A UMT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SA1576AT106Q is a PNP bipolar junction transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 150mA. The DC current gain (hFE) is specified at a minimum of 120 at 1mA collector current and 6V collector-emitter voltage. With a transition frequency of 140MHz and a maximum power dissipation of 200mW, it is suitable for various signal amplification and switching tasks. The transistor is packaged in a UMT3 (SC-70, SOT-323) format, supplied on tape and reel. Typical applications include use in consumer electronics and industrial control systems. Collector cutoff current (ICBO) is rated at a maximum of 100nA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | UMT3 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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