2SA1515STPQ
TRANS PNP 32V 1A SPTManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SA1515STPQ is a PNP bipolar junction transistor (BJT) designed for through-hole mounting. This component offers a collector-emitter breakdown voltage (Vce) of 32 V and a continuous collector current (Ic) capability of 1 A. It features a transition frequency (fT) of 150 MHz and a maximum power dissipation of 300 mW. The DC current gain (hFE) is specified at a minimum of 120 at 100 mA collector current and 3 V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 500 mV at 50 mA base current and 500 mA collector current. Collector cutoff current (ICBO) is rated at a maximum of 500 nA. This device is supplied in a Tape & Reel (TR) package, utilizing the SPT (Super Power Transistor) package format with formed leads. Applications for this transistor include general-purpose amplification and switching in various electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 300 mW |
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