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2SA1515STPQ

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2SA1515STPQ

TRANS PNP 32V 1A SPT

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor's 2SA1515STPQ is a PNP bipolar junction transistor (BJT) designed for through-hole mounting. This component offers a collector-emitter breakdown voltage (Vce) of 32 V and a continuous collector current (Ic) capability of 1 A. It features a transition frequency (fT) of 150 MHz and a maximum power dissipation of 300 mW. The DC current gain (hFE) is specified at a minimum of 120 at 100 mA collector current and 3 V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 500 mV at 50 mA base current and 500 mA collector current. Collector cutoff current (ICBO) is rated at a maximum of 500 nA. This device is supplied in a Tape & Reel (TR) package, utilizing the SPT (Super Power Transistor) package format with formed leads. Applications for this transistor include general-purpose amplification and switching in various electronic systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-72 Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 3V
Frequency - Transition150MHz
Supplier Device PackageSPT
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)32 V
Power - Max300 mW

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