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2SA1038STPR

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2SA1038STPR

TRANS GP BJT PNP 120V 0.05A 3-PI

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor's 2SA1038STPR is a general-purpose PNP bipolar junction transistor. This device features a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 50mA. The maximum power dissipation is rated at 300mW. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 500mA collector current and 2V collector-emitter voltage. The transistor exhibits a Vce(sat) of 350mV at 50mA base current and 1A collector current. Collector cutoff current (ICBO) is specified at a maximum of 500nA. The operating junction temperature range extends to 150°C. This component is housed in an SPT package with formed leads, suitable for through-hole mounting, and supplied in tape and box packaging. Applications can be found in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseSC-72 Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic350mV @ 50mA, 1A
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 2V
Supplier Device PackageSPT
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max300 mW

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