2SA1038STPR
TRANS GP BJT PNP 120V 0.05A 3-PIManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SA1038STPR is a general-purpose PNP bipolar junction transistor. This device features a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 50mA. The maximum power dissipation is rated at 300mW. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 500mA collector current and 2V collector-emitter voltage. The transistor exhibits a Vce(sat) of 350mV at 50mA base current and 1A collector current. Collector cutoff current (ICBO) is specified at a maximum of 500nA. The operating junction temperature range extends to 150°C. This component is housed in an SPT package with formed leads, suitable for through-hole mounting, and supplied in tape and box packaging. Applications can be found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 300 mW |
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