2N4401T93
TRANS NPN 40V 0.6A TO92Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2N4401T93 is a general-purpose NPN bipolar junction transistor (BJT) designed for through-hole mounting in a standard TO-92 package. This device features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 600mA. The transistor offers a transition frequency of 250MHz and a maximum power dissipation of 625mW. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA collector current and 1V collector-emitter voltage, and a saturation voltage of 750mV at 50mA base current and 500mA collector current. The collector cutoff current is a maximum of 100nA (ICBO). The 2N4401T93 is suitable for applications in consumer electronics and industrial control systems. Packaging is provided in Tape & Box (TB).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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