2N3906T93
TRANS PNP 40V 0.2A TO92Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2N3906T93 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 200mA. With a minimum DC current gain (hFE) of 100 at 10mA and 1V, and a transition frequency of 250MHz, it offers reliable performance in moderate frequency ranges. The device dissipates a maximum power of 625mW and has a Vce saturation voltage of 400mV at 5mA base current and 50mA collector current. Packaged in a TO-92 (TO-226-3) through-hole form factor, the 2N3906T93 is supplied in Tape & Box (TB) packaging. Its operating temperature range extends up to 150°C (TJ). This transistor is suitable for use in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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