MSM5117400F-60J3-7
IC DRAM 16MBIT PARALLEL 26SOJManufacturer: Rohm Semiconductor
Categories: Memory
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Rohm Semiconductor MSM5117400F-60J3-7 is a 16Mbit Parallel DRAM memory integrated circuit. This component offers a 4M x 4 memory organization with a fast 30 ns access time. Designed for 4.5V to 5.5V operation, it features a 110 ns write cycle time. The MSM5117400F-60J3-7 is packaged in a 26-pin SOJ format. This volatile memory solution is suitable for applications in consumer electronics, industrial automation, and telecommunications equipment requiring high-speed data storage. It operates within a temperature range of 0°C to 70°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | - |
| Mounting Type | - |
| Memory Size | 16Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | DRAM |
| Memory Format | DRAM |
| Supplier Device Package | - |
| Write Cycle Time - Word, Page | 110ns |
| Memory Interface | Parallel |
| Access Time | 30 ns |
| Memory Organization | 4M x 4 |
| Programmable | Not Verified |
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