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BS2114F-E2

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BS2114F-E2

IC GATE DRVR HI/LOW SIDE 8SOIC

Manufacturer: Rohm Semiconductor

Categories: Gate Drivers

Quality Control: Learn More

The Rohm Semiconductor BS2114F-E2 is a dual, independent gate driver designed for high-side or low-side configurations. This inverting gate driver supports IGBT and N-Channel MOSFETs, featuring a high-side bootstrap voltage capability up to 600V. Operating with a supply voltage range of 10V to 20V, the device exhibits typical rise and fall times of 30ns. Input logic levels are specified with VIL at 0.8V and VIH at 2.6V. The BS2114F-E2 is housed in an 8-SOP (Surface Mount) package, specifically an 8-SOIC (0.173", 4.40mm Width), and is supplied on tape and reel (TR). Its operating temperature range is -40°C to 125°C. This component is utilized in power supply applications, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TA)
Voltage - Supply10V ~ 20V
Input TypeInverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-SOP
Rise / Fall Time (Typ)30ns, 30ns
Channel TypeIndependent
Driven ConfigurationHigh-Side or Low-Side
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.6V
Current - Peak Output (Source, Sink)-
ProgrammableNot Verified

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