BS2101F-E2
IC GATE DRVR HI/LOW SIDE 8SOICManufacturer: Rohm Semiconductor
Categories: Gate Drivers
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Rohm Semiconductor BS2101F-E2 is a dual-channel gate driver IC. This non-inverting device is configurable for high-side or low-side operation, supporting IGBT and N-Channel MOSFET gates. Key electrical specifications include a supply voltage range of 10V to 18V, with peak output currents of 60mA source and 130mA sink. The bootstrap voltage can reach a maximum of 600V. Logic thresholds are set at 1V for VIL and 2.6V for VIH. This component features typical rise and fall times of 60ns and 20ns, respectively. The BS2101F-E2 is housed in an 8-SOIC (0.173" width) surface-mount package, supplied on tape and reel. It is suitable for applications in power supply, motor control, and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 10V ~ 18V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Supplier Device Package | 8-SOP |
| Rise / Fall Time (Typ) | 60ns, 20ns |
| Channel Type | Synchronous |
| Driven Configuration | High-Side or Low-Side |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 1V, 2.6V |
| Current - Peak Output (Source, Sink) | 60mA, 130mA |
| Programmable | Not Verified |
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