BS2100F-E2
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Rohm Semiconductor
Categories: Gate Drivers
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The Rohm Semiconductor BS2100F-E2 is a half-bridge gate driver IC designed for efficient control of power transistors. This non-inverting, dual-driver device supports IGBT and N-Channel MOSFET gate types, featuring independent channel control. It offers a peak output current of 60mA source and 130mA sink, with rise and fall times of 200ns and 100ns respectively. The BS2100F-E2 operates with a supply voltage range of 10V to 18V and incorporates a bootstrap function with a maximum high-side voltage of 600V. Logic input voltage thresholds are 1V (VIL) and 2.6V (VIH). Packaged in an 8-SOIC (0.173", 4.40mm width) surface-mount configuration and supplied on tape and reel, this component is suitable for power supply, motor control, and industrial applications. It operates across an ambient temperature range of -40°C to 125°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 10V ~ 18V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Supplier Device Package | 8-SOP |
| Rise / Fall Time (Typ) | 200ns, 100ns |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 1V, 2.6V |
| Current - Peak Output (Source, Sink) | 60mA, 130mA |
| Programmable | Not Verified |
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