VT6M1T2CR
MOSFET N/P-CH 20V 0.1A VMT6Manufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor's VT6M1T2CR is a high-performance MOSFET array designed for demanding applications. This surface-mount component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 100mA at 25°C. The array is configured with both N-channel and P-channel MOSFETs, offering versatility in circuit design. Its logic-level gate capability, requiring only 1.2V drive, enhances efficiency. With a maximum power dissipation of 120mW and an Rds On of 3.5 Ohms at 100mA and 4.5V, it is suitable for power management and switching functions. The device operates within a temperature range of 150°C (TJ) and is supplied in a 6-SMD, Flat Leads package, specifically the VMT6, presented on tape and reel (TR). This component finds utility in various electronic systems including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 120mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Input Capacitance (Ciss) (Max) @ Vds | 7.1pF @ 10V |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 100mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate, 1.2V Drive |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Supplier Device Package | VMT6 |
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