VT6K1T2CR
MOSFET 2N-CH 20V 0.1A VMT6Manufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor VT6K1T2CR is a dual N-channel MOSFET array designed for high-efficiency switching applications. This surface mount component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 100mA at 25°C. The VT6K1T2CR offers a low on-resistance of 3.5 Ohms maximum at 100mA and 4.5V Vgs, with a power dissipation of 120mW. It operates with a logic level gate, supporting a 1.2V drive voltage, and has a threshold voltage (Vgs(th)) of 1V maximum at 100µA. The input capacitance (Ciss) is 7.1pF maximum at 10V. The VMT6 package is supplied on tape and reel. This component is suitable for use in consumer electronics and portable devices.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 120mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Input Capacitance (Ciss) (Max) @ Vds | 7.1pF @ 10V |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 100mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate, 1.2V Drive |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Supplier Device Package | VMT6 |