VT6J1T2CR
MOSFET 2P-CH 20V 0.1A VMT6Manufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor VT6J1T2CR is a dual P-channel MOSFET array designed for surface mounting. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 100mA at 25°C, with a maximum power dissipation of 120mW. The MOSFETs are characterized by a logic-level gate, enabling operation with a low 1.2V drive voltage. The on-resistance (Rds On) is specified at a maximum of 3.8 Ohms when driven at 100mA with a 4.5V gate-source voltage (Vgs). Input capacitance (Ciss) is a maximum of 15pF at 10V. The device operates within an ambient temperature range of -55°C to 150°C (TJ). Packaged in a VMT6 (6-SMD, Flat Leads) configuration and supplied on tape and reel (TR), the VT6J1T2CR is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 120mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Input Capacitance (Ciss) (Max) @ Vds | 15pF @ 10V |
| Rds On (Max) @ Id, Vgs | 3.8Ohm @ 100mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate, 1.2V Drive |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Supplier Device Package | VMT6 |
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