US6J2TR
MOSFET 2P-CH 20V 1A TUMT6Manufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Rohm Semiconductor US6J2TR is a dual P-channel MOSFET array designed for surface mount applications. This component features a 20V drain-source voltage rating and a continuous drain current capability of 1A at 25°C. The MOSFET array is built with Metal Oxide technology and incorporates a logic level gate for enhanced control. With a maximum power dissipation of 1W and an operating temperature range up to 150°C (TJ), it is suitable for demanding environments. The Rds On is specified at a maximum of 390mOhm at 1A, 4.5V. Key parameters include a gate charge of 2.1nC at 4.5V and input capacitance of 150pF at 10V. The device is supplied in a TUMT6 package, utilizing Tape & Reel packaging. This MOSFET array finds application in automotive and industrial sectors requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1A |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 10V |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TUMT6 |
Request a Quote
Clients Also Buy
US6M2GTR
MOSFET N/P-CH 30V/20V 1.5A TUMT6
TT8J13TCR
MOSFET 2P-CH 12V 2.5A 8TSST
SP8K3FD5TB1
MOSFET 2N-CH 30V 8SOP
