UM5K1NTR
MOSFET 2N-CH 30V 0.1A UMT5Manufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor UM5K1NTR is a dual N-channel MOSFET array in a UMT5 package. This device features a 30V drain-source breakdown voltage and a continuous drain current of 100mA. The MOSFET array offers a low on-resistance of 8 Ohm maximum at 10mA and 4V Vgs, with a gate threshold voltage of 1.5V maximum at 100µA. Designed for surface mounting, it operates at a maximum junction temperature of 150°C and dissipates up to 150mW. The UM5K1NTR is commonly utilized in portable electronics, consumer devices, and power management applications requiring compact and efficient switching solutions. This component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Source |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 150mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Input Capacitance (Ciss) (Max) @ Vds | 13pF @ 5V |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 10mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Supplier Device Package | UMT5 |
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