TT8M3TR
MOSFET N/P-CH 20V 2.5A 8TSSTManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor TT8M3TR is a MOSFET array featuring N-channel and P-channel transistors. This component offers a drain-to-source voltage (Vdss) of 20V with continuous drain currents (Id) of 2.5A for the N-channel and 2.4A for the P-channel at 25°C. The device supports logic-level gate drive, requiring only 1.5V for operation. Key electrical characteristics include a maximum gate charge (Qg) of 3.6nC at 4.5V and a maximum input capacitance (Ciss) of 260pF at 10V. With a low on-resistance (Rds On) of 72mOhm at 2.5A and 4.5V, and a maximum power dissipation of 1W, the TT8M3TR is suitable for applications requiring efficient switching. It is supplied in an 8-TSST package for surface mounting and is delivered on tape and reel. This MOSFET array is utilized in various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A, 2.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 10V |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.6nC @ 4.5V |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 8-TSST |
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