TT8M2TR
MOSFET N/P-CH 30V/20V 2.5A 8TSSTManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor TT8M2TR is a MOSFET array featuring both N-channel and P-channel configurations. This device offers drain-to-source voltages of 30V for the N-channel and 20V for the P-channel, with a continuous drain current capability of 2.5A at 25°C. The MOSFETs incorporate logic level gate functionality. Key electrical parameters include a maximum on-resistance of 90mOhm at 2.5A and 4.5V, input capacitance of 180pF at 10V, and gate charge of 3.2nC at 4.5V. The device operates up to a junction temperature of 150°C and is housed in an 8-TSST surface mount package, supplied on tape and reel. This component is suitable for applications in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 30V, 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 8-TSST |
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