TT8M1TR
MOSFET N/P-CH 20V 2.5A 8TSSTManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor TT8M1TR is a MOSFET array featuring N and P-channel configurations. This surface mount component provides a continuous drain current of 2.5A at 25°C with a drain-to-source voltage of 20V. Designed with a logic level gate, it operates with a 1.5V drive. Key electrical parameters include a maximum Rds On of 72mOhm at 2.5A and 4.5V, a gate charge Qg of 3.6nC (max) at 4.5V, and an input capacitance Ciss of 260pF (max) at 10V. The device is rated for a maximum power of 1W and an operating temperature of 150°C (TJ). The 8-TSST package is supplied on tape and reel. This component finds application in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 10V |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.6nC @ 4.5V |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 8-TSST |
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