TT8K2TR
MOSFET 2N-CH 30V 2.5A 8TSSTManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor TT8K2TR is a dual N-channel MOSFET array designed for surface mount applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.5A at 25°C. The device offers a low Rds On of 90mOhm maximum at 2.5A and 4.5V, along with a logic level gate for enhanced drive efficiency. With a maximum power dissipation of 1.25W and an operating temperature up to 150°C (TJ), it is suitable for demanding applications. Key electrical parameters include a gate charge (Qg) of 3.2nC maximum at 4.5V and an input capacitance (Ciss) of 180pF maximum at 10V. The TT8K2TR is supplied in an 8-TSST package on tape and reel. This MOSFET array finds utility in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 8-TSST |
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