TT8K1TR
MOSFET 2N-CH 20V 2.5A 8TSSTManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor TT8K1TR is a dual N-channel MOSFET array designed for surface mount applications. This component offers a 20V drain-source voltage and a continuous drain current capability of 2.5A at 25°C. Featuring logic-level gate drive with a 1.5V threshold, it is optimized for efficient switching. The device exhibits a low on-resistance of 72mOhm maximum at 2.5A and 4.5V Vgs. Key parameters include a 3.6nC gate charge and 260pF input capacitance. Packaged in an 8-TSST surface mount configuration and supplied on tape and reel, this MOSFET array is suitable for demanding applications in automotive and industrial electronics where space and performance are critical. The maximum power dissipation is 1W, and it operates across an extended temperature range up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 10V |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.6nC @ 4.5V |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 8-TSST |
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