TT8K11TCR
MOSFET 2N-CH 30V 3A 8TSSTManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor TT8K11TCR is a dual N-channel MOSFET array designed for demanding applications. This 30V device features a continuous drain current capability of 3A per channel at 25°C, with a low on-resistance of 71mOhm maximum at 3A and 10V Vgs. The logic-level gate design allows for efficient drive with a 4V Vgs. Key parameters include a gate charge (Qg) of 2.5nC maximum at 5V and input capacitance (Ciss) of 140pF maximum at 10V Vds. The TT8K11TCR is supplied in an 8-TSST surface mount package, capable of dissipating up to 1W of power and operating at junction temperatures up to 150°C. This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 10V |
| Rds On (Max) @ Id, Vgs | 71mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 5V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | 2.5V @ 1A |
| Supplier Device Package | 8-TSST |
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