TT8J2TR
MOSFET 2P-CH 30V 2.5A 8TSSTManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Rohm Semiconductor TT8J2TR is a 2 P-channel MOSFET array designed for surface mount applications. This device features a Drain to Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 2.5A at 25°C. The MOSFETs offer a low ON-resistance (Rds On) of 84mOhm maximum at 2.5A and 10V Vgs, with a logic level gate for enhanced control. Key parameters include a Gate Charge (Qg) of 4.8nC maximum at 5V and Input Capacitance (Ciss) of 460pF maximum at 10V Vds. The TT8J2TR operates at a maximum junction temperature of 150°C and has a power dissipation of 1.25W. Supplied in an 8-TSST package, this component is commonly utilized in automotive and industrial applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 10V |
| Rds On (Max) @ Id, Vgs | 84mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.8nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-TSST |
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