TT8J21TR
MOSFET 2P-CH 20V 2.5A 8TSSTManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor's TT8J21TR is a dual P-channel MOSFET array designed for surface mounting. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 2.5A at 25°C. The array is configured with two P-channel transistors, each with a maximum power dissipation of 650mW. Key electrical characteristics include a low on-resistance of 68mOhm at 2.5A and 4.5V Vgs, and a typical input capacitance (Ciss) of 1270pF at 10V Vds. The device supports logic level gate operation, with a gate threshold voltage (Vgs(th)) of 1V at 1mA, and a gate charge (Qg) of 12nC at 4.5V. Operating temperature ranges up to 150°C (TJ). The TT8J21TR is supplied in an 8-TSST package, delivered on tape and reel (TR). This MOSFET array is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 650mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1270pF @ 10V |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 8-TSST |
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