TT8J13TCR
MOSFET 2P-CH 12V 2.5A 8TSSTManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor's TT8J13TCR is a dual P-channel MOSFET array designed for demanding applications. This 8-TSST surface mount component offers a continuous drain current of 2.5A per channel at 25°C and a drain-to-source voltage (Vdss) of 12V. Featuring logic-level gate drive capabilities, it operates effectively with a 1.5V gate drive. The device exhibits a low on-resistance of 62mOhm maximum at 2.5A and 4.5V Vgs. With a maximum power dissipation of 1W and an operating junction temperature of 150°C, it is suitable for automotive and industrial power management systems. Key parameters include a gate charge (Qg) of 16nC maximum at 4.5V and input capacitance (Ciss) of 2000pF maximum at 6V. The TT8J13TCR is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 6V |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 8-TSST |
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