TT8J11TCR
MOSFET 2P-CH 12V 3.5A 8TSSTManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor TT8J11TCR is a dual P-channel MOSFET array designed for high-density surface mount applications. This component features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.5A at 25°C. The TT8J11TCR offers a low on-resistance of 43mOhm at 3.5A and 4.5V Vgs, with a maximum power dissipation of 650mW. It is engineered with a logic-level gate, requiring only 1.5V of drive. Key electrical characteristics include a gate charge (Qg) of 22nC maximum at 4.5V and an input capacitance (Ciss) of 2600pF maximum at 6V. The device operates within a temperature range of -55°C to 150°C (TJ) and is supplied in an 8-TSST package, specifically the 8-SMD, Flat Leads configuration, on tape and reel. This MOSFET array is suitable for applications in power management, battery charging, and portable electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 650mW |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 6V |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 3.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 8-TSST |
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