SP8M9TB
MOSFET N/P-CH 30V 9A/5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor's SP8M9TB is a MOSFET array featuring N-channel and P-channel configurations within an 8-SOP package. This device offers a Drain to Source Voltage (Vdss) of 30V, with continuous drain current ratings of 9A for the N-channel and 5A for the P-channel at 25°C. The FETs incorporate Logic Level Gate functionality. Key parameters include a maximum Gate Charge (Qg) of 21nC at 5V and a maximum Input Capacitance (Ciss) of 1190pF at 10V. The on-resistance (Rds On) is specified as 18mOhm maximum at 9A and 10V. This surface mount component operates up to a junction temperature of 150°C and has a maximum power dissipation of 2W. The SP8M9TB is suitable for applications in automotive and industrial sectors requiring efficient power switching. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A, 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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