SP8M9FU6TB
MOSFET N/P-CH 30V 9A/5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SP8M9FU6TB is an 8-SOP packaged MOSFET array featuring both N-channel and P-channel configurations. This device offers a 30V drain-to-source voltage (Vdss) with continuous drain currents of 9A for the N-channel and 5A for the P-channel at 25°C. Optimized for performance, it boasts a low Rds On of 18mOhm at 9A and 10V for the N-channel. The MOSFET array operates at a maximum power of 2W and supports a logic-level gate drive, with a gate charge (Qg) of 21nC at 5V. Input capacitance (Ciss) is rated at 1190pF maximum at 10V. This component is designed for surface mount applications and operates within a temperature range of -55°C to 150°C (TJ). Its robust design makes it suitable for applications in automotive and industrial sectors. The SP8M9FU6TB is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A, 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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