SP8M8TB
MOSFET N/P-CH 30V 6A/4.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Rohm Semiconductor's SP8M8TB is a dual MOSFET array featuring N-channel and P-channel configurations in a compact 8-SOP (8-SOIC) surface mount package. This device offers a 30V drain-source voltage rating. The N-channel MOSFET exhibits a continuous drain current (Id) of 6A at 25°C with a low on-resistance (Rds On) of 30mOhm at 6A, 10V. The P-channel MOSFET is rated for 4.5A continuous drain current under the same conditions. Both channels support logic-level gate drive, with a typical gate threshold voltage (Vgs(th)) of 2.5V at 1mA. Key parameters include a gate charge (Qg) of 7.2nC (max) at 5V and input capacitance (Ciss) of 520pF (max) at 10V. The component is rated for a maximum power dissipation of 2W and operates within a temperature range of 150°C (TJ). This MOSFET array is suitable for applications in automotive, industrial automation, and power management systems. The SP8M8TB is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A, 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
Request a Quote
Clients Also Buy
US6M2GTR
MOSFET N/P-CH 30V/20V 1.5A TUMT6
QS6K1TR
MOSFET 2N-CH 30V 1A TSMT6
SP8J1TB
MOSFET 2P-CH 30V 5A 8SOP
