SP8M8FU6TB
MOSFET N/P-CH 30V 6A/4.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SP8M8FU6TB is a MOSFET array featuring an N-channel and a P-channel configuration, designed for efficient power management. This component offers a drain-source voltage (Vdss) of 30V, with continuous drain currents of 6A for the N-channel and 4.5A for the P-channel at 25°C. It boasts a low on-resistance (Rds On) of 30mOhm at 6A and 10V, contributing to reduced power loss. The device supports logic-level gate drive, simplifying integration with lower voltage microcontrollers. Key electrical characteristics include a maximum gate charge (Qg) of 10.1nC at 5V and an input capacitance (Ciss) of 520pF at 10V. With a maximum power dissipation of 2W and an operating junction temperature up to 150°C, the SP8M8FU6TB is suitable for demanding applications in areas such as consumer electronics, industrial automation, and automotive systems. The component is supplied in an 8-SOIC package, facilitating surface mounting and is available on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A, 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10.1nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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