SP8M8FD5TB1
MOSFET N/P-CH 30V 6A/4.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SP8M8FD5TB1 is an 8-SOP surface mount MOSFET array featuring N-channel and P-channel configurations. This device offers a Drain-Source Voltage (Vdss) of 30V, with continuous drain current capabilities of 6A (Ta) for the N-channel and 4.5A (Ta) for the P-channel at 25°C. Key features include logic-level gate operation requiring a 4V drive for optimal performance. The N-channel MOSFET exhibits a maximum Rds(On) of 30mOhm at 6A, 10V, while the P-channel has a maximum Rds(On) of 56mOhm at 4.5A, 10V. Input capacitance (Ciss) is specified at 520pF (N-ch) and 850pF (P-ch) maximum at 10V Vds, with a maximum gate charge (Qg) of 7.2nC (N-ch) and 8.5nC (P-ch) at 5V Vgs. The component is rated for a maximum power dissipation of 2W (Ta) and an operating temperature of 150°C. This device is commonly utilized in automotive and industrial applications demanding efficient power switching and control. The SP8M8FD5TB1 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta), 4.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V, 850pF @ 10V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V, 56mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 5V, 8.5nC @ 5V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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