SP8M70TB1
MOSFET N/P-CH 250V 3A/2.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SP8M70TB1 is a MOSFET array featuring complementary N-channel and P-channel configurations. This device offers a drain-source voltage rating of 250V with continuous drain currents of 3A for the N-channel and 2.5A for the P-channel, both specified at 25°C. The maximum power dissipation is 650mW. Key electrical parameters include a maximum on-resistance of 1.63 Ohms at 1.5A and 10V Vgs for the N-channel, and a gate charge of 5.2nC at 10V Vgs. Input capacitance (Ciss) is a maximum of 180pF at 25V Vds. The SP8M70TB1 is supplied in an 8-SOP package suitable for surface mounting and operates within a temperature range of 150°C (TJ). This component finds application in power management circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 650mW |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 3A, 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V |
| Rds On (Max) @ Id, Vgs | 1.63Ohm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-SOP |
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