SP8M5TB
MOSFET N/P-CH 30V 6A/7A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SP8M5TB is an N-channel and P-channel MOSFET array designed for demanding applications. This device features a Drain to Source Voltage (Vdss) of 30V and continuous drain current ratings of 6A for the N-channel and 7A for the P-channel, both specified at 25°C. With a maximum power dissipation of 2W and a low Rds On of 30mOhm at 6A and 10V, it offers efficient switching performance. The logic level gate feature simplifies drive requirements, and a gate charge (Qg) of 7.2nC at 5V ensures fast switching speeds. The input capacitance (Ciss) is 520pF at 10V. Packaged in an 8-SOP (8-SOIC) with a 3.90mm width, this surface mount component operates within a temperature range of -55°C to 150°C (TJ). It is supplied on a tape and reel. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A, 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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