SP8M5FU6TB
MOSFET N/P-CH 30V 6A/7A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Rohm Semiconductor SP8M5FU6TB is an 8-SOP surface mount MOSFET array featuring complementary N-channel and P-channel configurations. This component offers a Drain to Source Voltage (Vdss) of 30V with continuous drain currents of 6A for the N-channel and 7A for the P-channel at 25°C. The device boasts a low ON-resistance of 28mOhm maximum at 6A and 10V, facilitated by a Logic Level Gate feature. Key electrical parameters include a maximum power dissipation of 2W, a Gate Charge (Qg) of 10.1nC at 5V, and an Input Capacitance (Ciss) of 520pF at 10V. Operating temperature extends up to 150°C (TJ). This MOSFET array is suitable for applications in consumer electronics, industrial automation, and power management systems. The SP8M5FU6TB is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A, 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10.1nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
Request a Quote
Clients Also Buy
QS6K21FRATR
MOSFET 2N-CH 45V 1A TSMT6
US6M2GTR
MOSFET N/P-CH 30V/20V 1.5A TUMT6
TT8J13TCR
MOSFET 2P-CH 12V 2.5A 8TSST
