SP8M51TB1
MOSFET N/P-CH 100V 3A/2.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SP8M51TB1 is a high-performance MOSFET array designed for demanding applications. This component features a 100V breakdown voltage (Vdss) and offers continuous drain currents of 3A for the N-channel and 2.5A for the P-channel configuration. Packaged in a compact 8-SOP (8-SOIC) surface mount form factor, it dissipates a maximum of 2W. This array is suitable for use in automotive, industrial, and consumer electronics sectors where efficient power switching and space optimization are critical. The SP8M51TB1 is supplied in Tape & Reel (TR) packaging for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3A, 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOP |
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