SP8M4FU6TB
MOSFET N/P-CH 30V 9A/7A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SP8M4FU6TB is a MOSFET array featuring N-channel and P-channel transistors. This 8-SOP package component offers a Drain to Source Voltage (Vdss) of 30V, with continuous drain current (Id) capabilities of 9A for the N-channel and 7A for the P-channel, both specified at 25°C. The device supports a logic level gate, with a maximum Gate Charge (Qg) of 21nC at 5V and a Vgs(th) of 2.5V at 1mA. Input capacitance (Ciss) is a maximum of 1190pF at 10V. With a low On-Resistance (Rds On) of 18mOhm at 9A and 10V, this surface mount component dissipates a maximum of 2W and operates up to 150°C. This MOSFET array is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A, 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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