SP8M3FU7TB1
MOSFET N/P-CH 30V 5A/4.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SP8M3FU7TB1 is a MOSFET array featuring both N-channel and P-channel configurations. This component offers a Drain-to-Source Voltage (Vdss) of 30V, with continuous drain current ratings of 5A and 4.5A at 25°C for the N-channel and P-channel respectively. The device supports a maximum power dissipation of 2W (Ta) and is housed in an 8-SOP package for surface mounting. Key electrical characteristics include low on-resistance, with 51mOhm @ 5A for the N-channel and 56mOhm @ 4.5A for the P-channel, both specified at 10V Vgs. Gate charge values are 3.9nC (N-ch) and 8.5nC (P-ch) at 5V Vgs, and input capacitance is 230pF (N-ch) and 850pF (P-ch) at 10V Vds. The SP8M3FU7TB1 operates at temperatures up to 150°C and is supplied on tape and reel. This MOSFET array is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 4.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 10V, 850pF @ 10V |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 5V, 8.5nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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