SP8M3FU6TB
MOSFET N/P-CH 30V 5A/4.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SP8M3FU6TB is an N-channel and P-channel MOSFET array offering 30V drain-to-source voltage. This device features a continuous drain current of 5A for the N-channel and 4.5A for the P-channel, both rated at 25°C. The SP8M3FU6TB is designed with a logic level gate, suitable for applications requiring lower gate drive voltages. Key electrical characteristics include a maximum Rds On of 51mOhm at 5A and 10V, a maximum gate charge (Qg) of 5.5nC at 5V, and input capacitance (Ciss) of 230pF at 10V. With a maximum power dissipation of 2W and an operating temperature up to 150°C, this MOSFET array is housed in an 8-SOP package for surface mounting. This component is frequently utilized in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A, 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 10V |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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