SP8M2FU6TB
MOSFET N/P-CH 30V 3.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Rohm Semiconductor SP8M2FU6TB is a MOSFET array featuring N-channel and P-channel configurations. This 8-SOP package component offers a Drain to Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 3.5A at 25°C. The device exhibits a maximum On-Resistance (Rds On) of 83mOhm at 3.5A and 10V. Key parameters include a gate charge (Qg) of 3.5nC (max) at 5V and an input capacitance (Ciss) of 140pF (max) at 10V. Rated for a maximum power dissipation of 2W, it operates within an ambient temperature range of 150°C (TJ). This component is commonly utilized in automotive and industrial applications requiring efficient power switching and control. The RoHS compliant part is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 10V |
| Rds On (Max) @ Id, Vgs | 83mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
Request a Quote
Clients Also Buy
SP8M10FRATB
MOSFET N/P-CH 30V 7A/4.5A 8SOP
BSM600D12P3G001
SIC 2N-CH 1200V 600A MODULE
QH8K26TR
MOSFET 2N-CH 40V 7A TSMT8
