SP8K5FU6TB
MOSFET 2N-CH 30V 3.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SP8K5FU6TB is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 3.5A per channel at 25°C. With a low on-resistance of 83mOhm maximum at 3.5A and 10V Vgs, it minimizes conduction losses. The logic level gate feature simplifies drive requirements, and the low gate charge of 3.5nC at 5V contributes to efficient switching performance. The device is housed in an 8-SOP package, suitable for surface mounting, and can dissipate up to 2W. It operates across a wide temperature range up to 150°C (TJ). Applications include power management circuits in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 10V |
| Rds On (Max) @ Id, Vgs | 83mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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