SP8K4FU6TB
MOSFET 2N-CH 30V 9A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SP8K4FU6TB is a dual N-channel MOSFET array designed for power management applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 9A at 25°C. With a low on-resistance of 17mOhm at 9A and 10V Vgs, it facilitates efficient power switching. The logic level gate input ensures compatibility with lower voltage control signals. Key electrical parameters include a maximum gate charge of 21nC at 5V and a maximum input capacitance of 1190pF at 10V. The device is housed in an 8-SOP package, suitable for surface mounting, and rated for a maximum power dissipation of 2W with an operating temperature up to 150°C. This MOSFET array finds application in consumer electronics, industrial automation, and automotive systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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