SP8K3TB1
MOSFET 2N-CH 30V 7A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Rohm Semiconductor SP8K3TB1 is a dual N-channel MOSFET array housed in an 8-SOP package. This device features a 30V drain-to-source voltage (Vdss) and supports a continuous drain current of 7A at 25°C. Optimized for logic-level gate operation, it requires a 4V gate drive. Key electrical characteristics include a maximum on-resistance (Rds On) of 24mOhm at 7A and 10V, a maximum gate charge (Qg) of 11.8nC at 5V, and a maximum input capacitance (Ciss) of 600pF at 10V. The SP8K3TB1 operates at temperatures up to 150°C and dissipates a maximum power of 2W. This component is suitable for applications in automotive and industrial sectors. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11.8nC @ 5V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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