SP8K3FU6TB
MOSFET 2N-CH 30V 7A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SP8K3FU6TB is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This 30V device features a continuous drain current capability of 7A at 25°C and a low on-resistance of 24mOhm at 7A and 10V, minimizing conduction losses. The logic level gate input simplifies drive requirements with a threshold voltage (Vgs(th)) of 2.5V at 1mA. Key parameters include a gate charge (Qg) of 11.8nC (max) at 5V and input capacitance (Ciss) of 600pF (max) at 10V. The SP8K3FU6TB is housed in an 8-SOP package, suitable for surface mounting and rated for a maximum power dissipation of 2W. Its operating temperature range extends to 150°C (TJ). This component is commonly employed in consumer electronics, industrial controls, and automotive systems requiring compact and efficient power management. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11.8nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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