SP8K32TB1
MOSFET 2N-CH 60V 4.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SP8K32TB1 is a dual N-channel MOSFET array designed for high-density surface mount applications. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 4.5A at 25°C. The device boasts a low on-resistance (Rds On) of 65mOhm at 4.5A and 10V Vgs, along with a logic level gate requiring only 4V drive. Key parameters include a gate charge (Qg) of 10nC (Max) at 5V and input capacitance (Ciss) of 500pF (Max) at 10V. The SP8K32TB1 is packaged in an 8-SOP (8-SOIC) configuration, suitable for automated assembly, and operates across a temperature range of -55°C to 150°C. Power dissipation is rated at 2W. This MOSFET array finds application in various industrial and consumer electronics requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 10V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 5V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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