SP8K31TB1
MOSFET 2N-CH 60V 3.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SP8K31TB1 is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.5A at 25°C. The SP8K31TB1 offers a low on-resistance (Rds On) of 120mOhm at 3.5A and 10V, and a logic level gate for simplified drive requirements. With a maximum power dissipation of 2W and an operating temperature up to 150°C, it is suitable for demanding environments. The device is packaged in a surface-mount 8-SOP (8-SOIC) format, supplied on tape and reel. Key parameters include a gate charge (Qg) of 5.2nC (max) at 5V and input capacitance (Ciss) of 250pF (max) at 10V. This MOSFET array finds application in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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