SP8K2FU6TB
MOSFET 2N-CH 30V 6A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SP8K2FU6TB is a 2 N-Channel MOSFET array housed in an 8-SOP package. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 6A at 25°C. The MOSFETs support logic-level gate operation, with a typical Gate Charge (Qg) of 10.1nC at 5V and an Input Capacitance (Ciss) of 520pF at 10V. The low on-resistance, 30mOhm maximum at 6A and 10V Vgs, contributes to efficient power handling, with a maximum power dissipation of 2W. Operating temperature range is up to 150°C (TJ). This component is commonly utilized in power management and switching applications across various industries. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10.1nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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