SP8K24FU6TB
MOSFET 2N-CH 45V 6A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SP8K24FU6TB is an 8-SOP packaged dual N-channel MOSFET array. This device features a drain-to-source voltage of 45V and a continuous drain current capability of 6A at 25°C. The MOSFETs utilize a logic level gate for enhanced compatibility with lower voltage control signals. Key electrical parameters include a maximum Rds(on) of 25mOhm at 6A and 10V, an input capacitance (Ciss) of 1400pF (max) at 10V, and a gate charge (Qg) of 21.6nC (max) at 5V. With a maximum power dissipation of 2W and an operating junction temperature of 150°C, it is suitable for applications in automotive and industrial power management systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 45V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 10V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21.6nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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