SP8K22FU6TB
MOSFET 2N-CH 45V 4.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SP8K22FU6TB is a dual N-channel MOSFET array designed for surface mount applications. This component features a Drain to Source Voltage (Vdss) of 45V and a continuous Drain current (Id) of 4.5A at 25°C. The MOSFET array utilizes Metal Oxide technology and offers a Logic Level Gate feature. Key electrical parameters include a maximum Gate Charge (Qg) of 9.6nC at 5V and a maximum Input Capacitance (Ciss) of 550pF at 10V. The On-Resistance (Rds On) is specified at a maximum of 46mOhm at 4.5A and 10V. The device is rated for a maximum power dissipation of 2W and operates within a temperature range of 150°C (TJ). Supplied in an 8-SOP (8-SOIC) package, it is available in Tape & Reel (TR) packaging. This MOSFET array is suitable for use in automotive, industrial, and power management applications requiring efficient switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 45V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 10V |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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