SP8K1FU6TB
MOSFET 2N-CH 30V 5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Rohm Semiconductor's SP8K1FU6TB is a dual N-channel MOSFET array designed for efficient power switching applications. This 8-SOP surface-mount component offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 5A at 25°C. Featuring a logic-level gate, it is optimized for low-voltage drive. The device exhibits a maximum on-resistance (Rds On) of 51mOhm at 5A and 10V, with a gate charge (Qg) of 5.5nC at 5V and input capacitance (Ciss) of 230pF at 10V. With a maximum power dissipation of 2W and an operating temperature up to 150°C (TJ), the SP8K1FU6TB is suitable for use in automotive and industrial control systems. The package is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 10V |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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