SP8J65TB1
MOSFET 2P-CH 30V 7A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SP8J65TB1 is a dual P-channel MOSFET array designed for high-efficiency power switching applications. This 30V device features a continuous drain current capability of 7A at 25°C and a low on-resistance of 29mOhm maximum at 7A, 10V. With a logic level gate, it facilitates direct control from lower voltage microcontrollers. The SP8J65TB1 offers a maximum power dissipation of 2W and operates across a wide temperature range up to 150°C (TJ). Its 8-SOP package with tape and reel packaging is suitable for automated surface mount assembly. Key parameters include a gate charge of 18nC maximum at 5V and an input capacitance of 1200pF maximum at 10V. This component finds application in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 10V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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