SP8J5FU6TB
MOSFET 2P-CH 30V 7A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Rohm Semiconductor SP8J5FU6TB is a dual P-channel MOSFET array designed for high-efficiency switching applications. This 8-SOP package component features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 7A at 25°C. The device offers a low on-resistance (Rds On) of 28mOhm at 7A and 10V Vgs, with a logic level gate for enhanced compatibility. Key parameters include a maximum gate charge (Qg) of 25nC at 5V and an input capacitance (Ciss) of 2600pF at 10V. With a maximum power dissipation of 2W, this surface mount device is suitable for use in automotive and industrial power management systems. The SP8J5FU6TB is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 10V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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